Speakers
Prof.
Bob Hirosky
(Virginia)
Grace Cummings
(Virginia Commonwealth University)
Description
Devices composed of wide band gap semiconductors such as GaInP have the
theoretical potential to withstand many orders of magnitude larger
radiation exposures compared to silicon. LightSpin Technologies has developed high density, large area SPAD arrays in GaInP with resolution for single photon peaks over the past several years. We report on measurements
using a sample of the latest generation of prototype devices,
demonstrating performance properties of new large GAPD arrays based on
this compound semiconductor.
Primary author
Prof.
Bob Hirosky
(Virginia)
Co-authors
Prof.
Brad Cox
(University of Virginia)
Grace Cummings
(Virginia Commonwealth University)
Dr
Shannon Zelitch
(U. Virginia)
Mr
Thomas Anderson
(U. Virginia)