As Si-based integrated circuits have begun to reach their limit in production viability, size, and power research has begun to focus on incorporating magnetic functionalities into devices for applications ranging from data storage to medical use. Ion implantation is a preferred technique used to introduce impurities into various substrates due to the control of the impurity concentration and penetration range which are controlled through the ion fluence and ion energy respectively during the implantation. However, Dilute Magnetic Semiconductor(DMS) materials are difficult to make from a traditional ion beam approach due to the high concentration of magnetic material that needs to be imparted. Using an ion beam process known as gettering it is possible to migrate transition metals deeper into the substrate than their initial end of the range thereby reducing the damages to the crystal lattice around the implanted species of interest. Utilizing the gettering process and varying the modification conditions two room temperature soft-ferromagnetic DMS InP substrates have been fabricated whose differences in magnetic saturation and magnetic remnant values are attributed to the Ni fluences.