Mar 18 – 22, 2021
Stony Brook, NY
US/Eastern timezone

Development of (V)UV-Sensitive GaN Geiger-Mode Photodiodes

Mar 19, 2021, 12:42 PM
Stony Brook, NY

Stony Brook, NY

Online [US/EST Timezone]
Photodetectors Photodetectors


Nepomuk Otte (Georgia Institute of Technology)


We present results from our ongoing development of Geiger-mode GaN-photodiodes. Motivated by the silicon photomultiplier's great success, our objective is to transfer the silicon-photomultiplier concept - a matrix of individually quenched single-photon avalanche diodes - to GaN and AlGaN. These are wide band-gap III-N semiconductors with much better intrinsic (V)UV sensitivity than silicon, making them interesting photon-detector materials, for example, to detect scintillation light from liquid Xe and Ar detectors.

The purity of III-N semiconductor substrates is now sufficiently high to envision single-photon sensitive photodiodes operating in Geiger mode. And indeed, we successfully fabricated GaN photodiodes and could demonstrate their Geiger-mode characteristics and single-photon sensitivity.

This presentation will discuss the electrical and optical characteristics of our GaN structures and their implications for developing a GaN solid-state photomultiplier.

Primary authors

Nepomuk Otte (Georgia Institute of Technology) Minkyu Cho (Georgia Institute of Technology) Theeradetch Detchprohm (Georgia Institute of Technology) Russell Dupuis (Georgia Institute of Technology) Eliza Gazda (Georgia Institute of Technology) Hoon Jeong (Georgia Institute of Technology) Mi-Hee Ji (Georgia Institute of Technology) Marzieh Noodeh-Bakhtiary (Georgia Institute of Technology) Shyh-Chiang Shen (Georgia Institute of Technology) Zhiyu Xu (Georgia Institute of Technology)

Presentation materials